Old Diamond Database

38.1 ±  1.5 ppm [N]
(SIMS, FTIR, UV-VIS, Spin Bath)

99.95% 12C
0.016% 13C (SIMS)
350 ppm Hydrogen (SIMS)

bulk, not irradiated/annealed

E6 details

$[N_s^0]$ ~ 6 ppm 1.1% 13C bulk, as grown full details from E6
N = 8 ppm (SIMS)
Hydrogen = 53 ppm (SIMS)
13C = 1 % (SIMS)

bulk, as grown, (not irradiated or annealed)
N = 3.8 ± 0.3 ppm (SIMS, T2, FTIR)
1.1% 13C (SIMS)
H ~ 19 ppm (SIMS)
see full E6 characterization

1.5 mm x 1.67 mm, 40 um layer on ELSC

10 ppm 15N

99.999% 12C (E6 told us 99.95% but SIMS measurements found 0.003% 13C in layer)

Not irradiated or annealed.

Brother to Cersei

Small piece cut off from 5 x 5 mm original diamond by DDK

E6 layer sample, 3-5 um, 4 mm x 4 mm
N-doped 99.999% 12C CVD layer (≈4-5 μm), as grown
EL SC substrate
Electron irradiated
Irradiated at PrismGem
Annealed in lab furnace at 800C for 12 hours

from E6:
$[N_{total}]$ = 17 ppm
$[N_s^0]$ = 14 ppm (before irradiation+anneal)
$[NV_{total}]$ = 3.6 ppm
irradiated and annealed
99.999% 12C
4 mm x 4 mm x 0.1 mm plate (no substrate)

*plate produced from same sample as The Wasp

E6 CVD
EL SC substrate

E6 polycrystalline
[N] = low density

10 um layer on EL, 2 x 2 mm, cut into four pieces, angle-side polished
irradiated and annealed by E6
[N]: 14 ppm
15N
12C/13C: >99.99%
[NV] 2.7 ppm
“purple diamond” process, Angle polished edges, cut into four pieces

10 um layer on EL, 2 x 2 mm, cut into four pieces, angle side polished
irradiated and annealed by E6
[N]: 17 ppm
15N
12C/13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process, Angle polished edges, cut into four pieces

10 um layer on EL, 2 x 2 mm, cut into four pieces, side polished
irradiated and annealed by E6
[N]: 17 ppm
15N
12C/13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process, polished edges, cut into four pieces

10 um layer on EL, 2 x 2 mm, cut into four pieces, side polished
irradiated and annealed by E6
[N]: 17 ppm
15N
13C/12C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process, polished edges, cut into four pieces

E6 polycrystalline
broken into 2 pieces
[N] = low density

E6 reported: 10 ppm [14N] (see lablog)
>99.95% 12C (unreported)
10 um layer on ELSC
irradiation doseage: 3e18/cm^-2
annealed 800C 12 hours, 1000C 12 hours

Apollo CVD
preferential NV orientation
[N] = low density

E6 polycrystalline
[N] = low density

E6 CVD
EL SC substrate
¹⁵N 14-keV implant, 1° tilt
one-quarter of sample
[N] = 1 x 10¹¹ cm^-2
[NV] ≈ 6 x 10⁹ cm^-2

E6 CVD
99.999% 12C layer
EL SC substrate
polished
14N 2.5-keV implant dose matrix (Bochum)
900C anneal (8 hours)
[N] = 1.4 x 10¹² cm^-2
[N] = 1.4 x 10¹¹ cm^-2
[N] = 4.2 x 10¹⁰ cm^-2
[N] = 1.4 x 10¹⁰ cm^-2
[N] = 4.2 x 10⁹ cm-2
[N] = 1.4 x 10⁹ cm-2

E6 polycrystalline
[N] = low density

E6 HPHT (type 1b), polished
electron irradiation
anneal
[N] ≈ 6 x 10¹⁹ cm^-3
[NV] ≈ 5.3 x 10¹⁸ cm^-3

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process

E6 layer sample. Targeted 25 ppm, 0.5-2 um, 4 mm x 4 mm
N-doped 99.999% 12C CVD layer (≈0.5-2 μm), as grown
EL SC substrate
Electron Irradiated
Linewidth (FWHM) ~650-700 kHz
[N] = 1.26 x 10¹⁸ cm^-3
[N] = 7.2 ppm

~10 large etch pits/pyramids

~1000s of tiny etch pits

E6 CVD
{110}-grown CVD substrate
preferential NV orientation
[N] ≈ 1.8 x 10¹⁶ cm^-3 (reported by E6)
[N] = 0.07 ppm (SIMS)

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process, no 14N contamination

[14N] = 15 ppm (supposed to be 2.5 ppm)
99.999% 12C
4 x 4 mm
~5um thick
SG plate

see details here

~ 14 ppm [Ns0] samples, natural 13C abundance, ~3.5 ppm [NV]
2070616: 2.7 mm x 2.7 mm x 0.65 mm

E6 CVD
4.96mm x 2.52mm x 1.38mm
{110}-grown sample
preferential NV orientation
[N] = low density

Apollo CVD
(nominal) thin N-doped layer, not observed
CVD substrate
[N] > 1 x 10¹⁵ cm^-3
[NV] ≈ 5 x 10¹² cm^-3

E6 CVD
4.7mm x 1.1mm x 1.2mm
course [NV] striations
[N] = medium density

E6 CVD
8.3mm x 3.2mm x 1.4mm
course [NV] striations, some dislocations
[N] = medium density

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process, no 14N contamination

Apollo CVD
1mm x 2mm x 4mm
[N] ≈ 4.7 × 10¹⁷  cm^-3 (SIMS)
[NV] ≈ 2.5 x 10¹⁶ cm^-3 (OD)

1-3 um layer on EL
irradiated and annealed by E6
[N] = ~3 ppm
15N
12C/13C >99.99%
polished edges

5×5 mm 40 um layer on ELSC

10 ppm 15N

99.95% 12C

Irradiated at Prism Gem: 3 x 10^18 e/cm^2 at 1 MeV.

sister sample to Jaime

Side polished, DDK

E6 CVD
5.8mm x 1.4mm x 1.2mm
3-layer stepped synthesis

E6 CVD
3.3mm x 3.3mm x 2.6mm
strong areas of strain
[N] = medium density

E6 CVD
3.1mm x 2.8mm x 2.7mm
[N] = medium density

bulk
irradiated and annealed by E6
~0.3 = [N]
14N
1.1% 13C
Early prototypes of DNV series commercial product

E6 HPHT (type 1b)
electron irradiation
anneal
[NV] ≈ 7.9 x 1018 cm-3

E6 CVD
3.6mm x 3.6mm x 3.2mm
[N] = medium density

E6 CVD
[N] = low density
[NV] = very low density

1.7 um layer on SG
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process

1.7 um layer on EL
high temp anneal at 1500 C
[N] = 17 ppm
15N
12C/13C >99.99%
no 14N contamination!

E6 CVD
~2mm x 2mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 1017 cm-3

E6 CVD
4.5MeV electrion irradiation (6 minutes)
800C anneal (8 hours)
[N] = medium density

1.7 um layer on EL irradiated and annealed by E6 [N]: 17 ppm 15N 12C or 13C: >99.99% [NV]: 2.7 ppm “purple diamond” process, no 14N contamination

~ 14 ppm [Ns0] samples, natural 13C abundance, ~3.5 ppm [NV]
2070508: 2.7 mm x 2.7 mm x 0.5 mm

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 10¹⁷ cm^-3
cut into 4 pieces by DDK
¹⁵N 200-keV implant
anneal recipe 3, anneal recipe 4
[N] = 2.5 x 10¹³ cm^-2

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 1017 cm-3
cut into 4 pieces by DDK
15N 200-keV implant
anneal recipe 3, anneal recipe 4
[N] = 1 x 1014 cm-2

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 10¹⁷ cm^-3
cut into 4 pieces by DDK
15N 400-keV implant
anneal recipe 3, anneal recipe 4
[N] = 2.5 x 10¹³ cm^-2

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 10¹⁷ cm^-3
cut into 4 pieces by DDK
15N 400-keV implant
not yet annealed
[N] = 2.5 x 10¹³ cm^-2

E6 CVD
99.6% 12C layer (50-100 μm)
natural abundance substrate
14N2 12-keV implant, 0° tilt
[N] = 1 x 10⁹ cm^-2
[NV] ≈ 5 x 10⁷ cm^-2
T2 = 110 us
14N 6-keV implant, 1° tilt, nanopillars
[N] = 2 x 10¹³ cm^-2
[NV] ≈ 3.5 x 10¹¹ cm^-2
T2 = 3 us

E6 CVD
99.99% 12C layer
HPHT (type 1b) substrate, polished
[N] ≈ 2 x 10¹⁷ cm^-3

~20 um layer on substrates with more background than EL but less than SG
irradiated and annealed by E6
[N] = 17 ppm
14N
12C/13C >99.99%
new process to attempt to reduce strain

1.7 um layer on EL irradiated and annealed by E6 [N] = 17 ppm 15N 12C/13C >99.99% [NV] = 2.7 ppm “purple diamond” process, polished edges

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process

E6 CVD
99.999% 12C
14N2 implant
[N] = ultra low density

E6 reported: 10 ppm [14N] (see lablog)
>99.95% 12C (unreported)
10 um layer on ELSC
NOT irradiated
NOT annealed

bulk
irradiated and annealed by E6
~0.3 = [N]
14N
1.1% 13C
Early prototypes of DNV series commercial product

E6 CVD
Standard grade
1200C annealed (8 hours)
[N] ≈ 2.6 x 10¹⁶ cm^-3

bulk
irradiated and annealed by E6
~0.3 = [N]
14N
1.1% 13C
Early prototypes of DNV series commercial product

E6 CVD
4.5MeV electron irradiation (2 minutes)
800C anneal (8 hours), polished
[NV] ≈ 2.6 x 10¹⁵ cm^-3

E6 polycrystalline
Thermal grade

E6 CVD
4.5MeV electron irradiation (4 minutes)
800C anneal (8 hours), polished
[NV] ≈ 3.7 x 10¹⁵ cm^-3

[N] < 100 ppb
99.999% 12C
CVD {100} with edges
100 um layer on ELSC

full E6 char details

1-3 um layer on EL
irradiated and annealed by E6
[N] = ~3 ppm
15N
12C/13C >99.99%
polished edges

10 um layer on EL
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process, polished edges

~ 14 ppm [Ns0] samples, natural 13C abundance, ~3.5 ppm [NV]
2070616: 2.7 mm x 2.7 mm x 0.65 mm

E6 CVD
N-doped CVD layer
HPHT (type 1b) substrate
[N] ≈ 1.8 x 10²⁰ cm^-3

E6 CVD
N-doped CVD layer (20 μm)
HPHT (type 1b) substrate
[N] ≈ 3.3 x 10¹⁹ cm^-3

E6 CVD
N-doped CVD layer (20 μm)
HPHT (type 1b) substrate
[N] ≈ 3.3 x 10¹⁹ cm^-3

bulk, Cut to an octagonal shape, 3.4 mm lateral dimensions, ~0.1 mm thick, and edges
irradiated and annealed by E6
N isotope: 14N
>99.99% 12C
~ 3 ppm [Ns0],~0.3 ppm [NV] E6 data
[NV-]/[NVtot] = 0.14 (UV-vis)

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process

~ 16 ppm [N]
15N
larger than 99.99% 12C
~ 10 um thick, grown on EL-grade substrate
Dimensions: 4.6 x 4.5 x 0.51 mm
Ink mark on low-[N] substrate side.
Irradiated and annealed to create ~ 4 ppm [NV]

E6 layer sample, 3.78 um, 4 mm x 4 mm

N-doped 99.999% 12C CVD layer (≈4-5 μm), as grown
EL SC substrate
Electron irradiated

Irradiated and annealed at E6

[N] = 3.76 x 10¹⁸ cm^-3
[N] = 21.4

Apollo CVD
[N] = low density

E6 CVD
4.5MeV electron irradiation (7 minutes)
800C anneal (8 hours), polished
[NV] ≈ 5.8 x 10¹⁵ cm^-3

[14N] = 15 ppm (supposed to be 2.5 ppm)
99.999% 12C
2 x 2 mm
~5um thick
ELSC plate

see details here

E6 layer sample.
N-doped 99.999% 12C CVD layer (≈13 μm), as grown
EL SC substrate

Electron irradiated
25 ppm, 13 um, 4 mm x 4 mm

[N] ≈ 2.9 x 10¹⁸ cm^-3 (measured for sister sample)

Linewidth (FWHM) ~800 kHz

One edge polished, by John

10 um layer on EL
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process

bulk, Cut to an octagonal shape, 3.4 mm lateral dimensions, ~0.1 mm thick, <100> and <110> edges
irradiated and annealed by E6
Isotope = 14N
>99.99% 12C
~ 3 ppm [Ns0], ~0.5 ppm [NV]
[NV-]/[NVtot] = 0.13 (UV-vis)
new process underdevelopment

no idea

E6 CVD
2mm x 2mm x 0.29mm
4.5MeV electron irradiation (10 minutes)
800C anneal (8 hours), polished
[NV] ≈ 4.9 x 1015 cm-3

E6 CVD, larger piece
99.99% 12C layer (25um)
EL SC substrate, polished
15N 14-keV implant
anneal recipe 3
[N] = 5 x 10^12 cm-2

E6 CVD
99.99% 12C layer (25um)
EL SC substrate, polished
smaller piece
15N 14-keV implant
anneal recipe 1, anneal recipe 2
[N] = 5 x 1012 cm-2

E6 CVD, larger piece
99.99% 12C layer (25um)
EL SC substrate, polished
15N 14-keV implant
anneal recipe 3
[N] = 5 x 1012 cm-2

E6 Standard grade
[N] ~ 150-170 ppb (target, not measured)
3.0 × 3.0 x 0.3 mm
See Post

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process, no 14N contamination

~ 14 ppm [Ns0] samples, natural 13C abundance, ~3.5 ppm [NV]
2070616: 2.7 mm x 2.7 mm x 0.65 mm

3.5×5 mm 40 um layer on ELSC

10 ppm 15N

99.95% 12C (confirmed with E6)

Irradiated at Prism Gem: 3 x 10^18 e/cm^2 at 1 MeV and annealed.

Brother to Cersei

Largest of four pieces cut by DDK

Sides polished, DDK

1.5 mm x 1.67 mm, 40 um layer on ELSC

10 ppm 15N

99.95% 12C (confirmed with E6)

Irradiated at Prism Gem: 3 x 10^18 e/cm^2 at 1 MeV. Not annealed.

Brother to Cersei

Small piece cut off from 5 x 5 mm original diamond by DDK

1.5 mm x 1.67 mm, 40 um layer on ELSC

10 ppm 15N

99.95% 12C (confirmed with E6)

irradiated 6e18e/cm^2 at 1MeV (Prism Gem) but not annealed

Brother to Cersei

Small piece cut off from 5 x 5 mm original diamond by DDK

E6 HPHT (type 1b)
laser cut into 1mm x 1mm piece by DDK
polished
[N] ≈ 2 x 1019 cm-3

E6 Standard grade
[N] ~ 150-170 ppb (target, not measured)
3.0 × 3.0 x 0.3 mm
See Post

E6 CVD
N-doped 99.999% 12C CVD layer (≈13 μm), as grown
EL SC substrate
[N] = 4.71 x 10¹⁸ cm^-3 – SIMS
electron irradiation (1.3 x 10¹⁴ cm^-2 s^-1 beam flux, 2.5 hours)
1 of 4 pieces
Sister samples from same batch: Nebula, Thanos

E6 CVD
N-doped 99.999% 12C CVD layer (≈13 μm), as grown
EL SC substrate
[N] = 4.71 x 10¹⁸ cm^-3 – SIMS
electron irradiation (1.3 x 10¹⁴ cm^-2 s^-1 beam flux, 2.5 hours)
1 of 4 pieces
Sister samples from same batch: Nebula, Thanos

E6 CVD
N-doped 99.999% 12C CVD layer (≈13 μm), as grown
EL SC substrate
[N] = 4.71 x 10¹⁸ cm^-3 – SIMS
electron irradiation (1.3 x 10¹⁴ cm^-2 s^-1 beam flux, 2.5 hours)
1 of 4 pieces
Sister samples from same batch: Nebula, Thanosla, Thanos

E6 CVD
N-doped 99.999% 12C CVD layer (≈13 μm), as grown
EL SC substrate
[N] = 4.71 x 10¹⁸ cm^-3 – SIMS
electron irradiation (1.3 x 10¹⁴ cm^-2 s^-1 beam flux, 2.5 hours)
1 of 4 pieces
Sister samples from same batch: Nebula, Thanos

Apollo CVD
[N] = medium density

1.7 um layer on EL
as-grown
[N] = 17 ppm
15N
12C/13C >99.99%
no 14N contamination!

E6 CVD
2mm x 2mm x 0.25mm
4.5MeV electron irradiation (15 minutes)
800C anneal (8 hours), polished
[NV] ≈ 1.0 x 1015 cm-3

E6 CVD
4.5MeV electron irradiation (120 minutes)
800C anneal (8 hours), polished
[NV] ≈ 3.4 x 1015 cm-3

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (ramp only), polished
[NV] ≈ 0 cm-3

Samples 1860320-1 to 4 are ~2.5um thick, 1-3ppm [N] layers (we also expect [Ns] to be around 2.5ppm), 99.999% 12C, 15N grown on 2 small EL (2x2mm).

T2: 180us
DQ T2*: 8.9us
Contrast (echo) is 0.5% (very poor)
g=2 unknown (DEER-ESR not yet measured)
Some surface issues (etch pits)
13C rich interlayer with 300 ppb [N]
E6 irradiated and annealed

see data here

HPHT Bulk Sample
100 ppm N
10 ppm NV
10% 13C

Samples 1860320-1 to 4 are ~2.5um thick, 1-3ppm [N] layers (we also expect [Ns] to be around 2.5ppm), 99.999% 12C, 15N grown on 2 small EL (2x2mm).

T2: 180us
DQ T2*: 8.9us
Contrast (echo) is 0.5% (very poor)
g=2 unknown (DEER-ESR not yet measured)
Some surface issues (etch pits)
13C rich interlayer with 300 ppb [N]
E6 irradiated and annealed

see data here

E6 CVD
6-layer stepped synthesis
HPHT (type 1b) substrate

see other T2 measurements:

L1 

L2

L3

L4

L5

E6 CVD
99.99% 12C layer (140 μm)
HPHT (type 1b) substrate (100 μm)
polished
[N] ≈ 2 x 10¹⁷ cm^-3
[NV] ≈ 1 x 10¹⁴ cm^-3 (60 μm)

E6 HPHT (type 1b)
neutron irradiated at MIT
1200 C anneal (8 hours)
[N] ≈ 2 x 10¹⁹ cm^-3

E6 Standard grade
[N] ~ 150-170 ppb (target, not measured)
3.0 × 3.0 x 0.3 mm
See Post

~ 16 ppm [N]
15N
> 99.99% 12C
~ 10 um thick, grown on EL-grade substrate
Dimensions: 4.6 x 4.6 x 0.54 mm
Ink mark on low-[N] substrate side.
Irradiated and annealed to create ~ 4 ppm [NV]

bulk
irradiated and annealed by E6
~0.3 = [N]
14N
1.1% 13C
Early prototypes of DNV series commercial product

Unknown

Apollo CVD
N-doped layer (20 μm)
CVD substrate
[N] ≈ 9 x 10¹⁸ cm^-3  (~ 50 ppm)
[NV] ≈ 7 x 10^{^15} cm^-3  (~0.04 ppm)

1.7 um layer on EL
irradiated and annealed by E6
[N]: 17 ppm
15N
12C or 13C: >99.99%
[NV]: 2.7 ppm
“purple diamond” process

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (1 hour), polished
[NV] ≈ 5.0 x 10¹⁴ cm^-3

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (4 hour), polished
[NV] ≈ 5.9 x 1014 cm-3

E6 CVD
99% 13C enriched layer
EL SC substrate
unpolished
[N] = medium

edge info unclear

E6 CVD
99% 13C enriched layer
EL SC substrate
unpolished
[N] = medium

edge info unclear

E6 CVD
99% 13C enriched layer
EL SC substrate
polished
[N] = medium
edge info unclear

E6 CVD
99% 13C enriched layer
EL SC substrate
polished
[N] = medium

edge info unclear

10 um layer on EL
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process

E6 CVD
99% 13C enriched layer
EL SC substrate
polished
[N] = medium

1.7 um layer on SG
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process

E6 CVD
99.99% 12C layer
HPHT (type 1b) substrate, polished by DDK
14MeV electron irradiation (4 minutes)
700C anneal (3 hours)
[N] ≈ 2 x 1017 cm-3

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (8 hour), polished
[NV] ≈ 4.1 x 1014 cm-3

E6 CVD
99.99% 12C layer (25um)
EL SC substrate, polished

Innovion implant, N14, 5e8, 3 keV, nanobeam on half of the sample

E6 CVD
99.99% 12C layer (25um)
EL SC substrate, polished
15N 400-keV implant
anneal recipe 3
[N] = 1 x 1014 cm-2

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (16 hour), polished
[NV] ≈ 6.5 x 1014 cm-3

Apollo CVD, broken into 3 pieces [N] = high density

Unknown

16ppm [N] layer, 14N, &gt;99.99% 12C 10um layer thickness, EL 4.0×4.0×0.52 mm^3. Ink mark on low [N] substrate side. Irradiated and annealed to create 4ppm [NV]

Starting [Ns0] 14ppm

Irradiated and annealed to create [NV] 4.8ppm

Natural abundance of 13C and 15N

Intermediate level of birefringence

3.0×3.0×0.5mm

Starting [Ns0] 14ppm

Irradiated and annealed to create [NV] 4.8ppm

Natural abundance of 13C and 15N

Intermediate level of birefringence

3.0×3.0×0.5mm

1-3 um layer on EL
irradiated and annealed by E6
[N] = ~3 ppm
15N
12C/13C >99.99%
polished edges

E6 CVD
50% 13C enriched layer
EL SC substrate
polished
14N 85-keV implant, 0° tilt
[N] = 2 x 1012 cm-2

E6 CVD
50% 13C enriched layer
EL SC substrate
polished again after RIE damage

E6 CVD
50% 13C enriched layer
EL SC substrate
polished

E6 CVD
50% 13C enriched layer
EL SC substrate
polished

E6 CVD N-doped 99.999%
12C CVD layer (≈ 13 μm),
as grown EL SC substrate
[N] ≈ 4.71 x 10¹⁸ cm^-3 = 26.7 ppm
electron irradiation (1.3 x 1014 cm-2 s-1 beam flux, 5 hours)

All edges polished (DDK)

1.7 um layer on EL
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process, polished edges

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (12 hour), polished
[NV] ≈ 8.6 x 1014 cm-3

E6 CVD
EL SC substrate
15N 14-keV implant, 1° tilt
one-quarter of sample
nanopillars
[N] = 5 x 10^12 cm-2
[NV] ≈ 3 x 10^11 cm-2

2.5 mm x 2.5 mm
12C isotopically enriched
N-doped with [15N] ~ 2.4 ppm
~50 micron thick layer
Lincoln Labs grown sample

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (9 hour), polished
[NV] ≈ 8.6 x 10¹⁴ cm^-3

1-3 um layer on SG
irradiated and annealed by E6
[N] = ~3 ppm
15N
12C/13C >99.99%

E6 CVD
EL SC substrate
edges polished
15N 14-keV implant, 1° tilt
one-quarter of sample
nanostubs
[N] = 1 x 10^12 cm-2
[NV] ≈ 1 x 10^10 cm-2

Apollo CVD
[N] = medium density

Apollo CVD
6 single-crystal samples fused together

1.7 um layer on SG irradiated and annealed by E6 [N] = 17 ppm 14N 12C/13C &gt;99.99% [NV] = 2.7 ppm “purple diamond” process

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (2 hour), polished
[NV] ≈ 8.4 x 1015 cm-3

E6 CVD
~2mm x 2mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 1017 cm-3

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (4 hour), polished
[NV] ≈ 1.3 x 10^16 cm-3

Sample 1860319-1 with a ~5um thick, 1-3ppm [N] layers (we expect [Ns] to be around 2.5ppm), 99.999% 12C, 14N (natural abundance) on top of a ~100um pure (EL) layer grown on 1 small EL (2x2mm) substrate. This sample was meant to be used to determine the influence of a pure interlayer on the g=2 features.

T2: 80 us, DQ T2*: 4.4us
contrast (echo) is 1% (poor)
g=2 is minimal
Some surface issues (etch pits)
E6 irradiated and annealed

see data here

Apollo CVD
Ga irradiated
[N] ≈ 3 x 10¹⁵ cm^-3 (Fluor.)
[NV] ≈ 1 x 10¹⁴ cm^-3 

[N] (1.2 ± 0.9) × 10¹⁶ cm^-3
[NV] (4.2 ± 2.8 ) × 10¹⁴ cm^-3  (Fluor.)

[N] = 0.11 ppm (SIMS)

E6 CVD
4.5MeV electron irradiation (60 minutes)
800C anneal (8 hour), polished
[NV] ≈ 1.5 x 1016 cm-3

~ 16 ppm [N]
15N
> 99.99% 12C
~ 10 um thick, grown on EL-grade substrate
Dimensions: 4.6 x 4.5 x 0.53 mm
Ink mark on low-[N] substrate side.
Irradiated and annealed to create ~ 4 ppm [NV]

E6 CVD
Prism geometry

CfA closet, gel pack case

E6 CVD
5% 13C enriched layer
EL SC substrate
polished
14N 85-keV implant, 0° tilt
[N] = 2 x 10¹⁰ cm^-2

E6 CVD
5% 13C enriched layer
EL SC substrate
polished
14N 85-keV implant, 0° tilt
[N] = 2 x 10¹² cm^-2

E6 CVD
5% 13C enriched layer
EL SC substrate
polished again after RIE damage

E6 CVD
5% 13C enriched layer
EL SC substrate
polished

E6 CVD
Standard grade
[N] ≈ 2.6 x 10¹⁶ cm^-3

E6 CVD
Standard grade
[N] ≈ 2.6 x 10¹⁶ cm^-3 (reported by E6)
[N] = 0.09 ppm (SIMS)

This is a N14 diamond, 1.7um thick, has been used in Connor’s <a href=”https://link.aps.org/doi/10.1103/PhysRevApplied.15.044020″>DQ4R paper</a> in Ramsey experiments

[N] ~ 3 ppm (75% 15N, 25% 14N)
99.999% 12C
2 x 2 mm
~5um thick
ELSC plate

see details here

bulk
irradiated and annealed by E6
~0.3 = [N]
14N
1.1% 13C
Early prototypes of DNV series commercial product

1-3 um layer on EL
irradiated and annealed by E6
[N] = ~3 ppm
15N
12C/13C >99.99%
polished edges

Apollo CVD
[N] = medium density

EL CVD Substrate {100}

2.0 x 2.0 x 0.5 mm

99% 13C layer

Ink mark on substrate side. Double side polished

details from E6

E6 CVD
99.99% 12C layer
HPHT (type 1b) substrate, polished off by E6
very thin and cracked around edges
[N] ≈ 2 x 10¹⁷ cm^-3

E6 CVD electron irradiation anneal
[N] ≈ 4.9 x 10¹⁸ cm^-3

UV-Vis measurements from Fall 2018 show [NV-] = 3.8 +/- 0.25 ppm and [NV0] = 2.0 +/- 0.15 ppm
Possible NV-NV interactions in Raven

4.8 mm x 4.8 mm x 0.5 mm

Bulk, 3.0 mm lateral dimensions, ~0.1 mm thick, edges
irradiated and annealed by E6
n isotope = 14N
>99.99% 12C
~ 3 ppm [Ns0], ~0.3 ppm [NV] (E6 data)
[NV-]/[NVtot] = 0.24 (UV-vis)

E6: Samples 1860318-1 to 4 are ~100um thick, 1-3ppm [N] layers (we expect [Ns] to be around 2.5ppm), 99.999% 12C, 15N grown on 4 small EL (2x2mm) substrates. Irradiated and annealed by E6.

T2: 90us, DQ T2*: 3.7us
contrast (echo) is 2% (medium-poor)
DEER ESR g=2 is minimal, no surface morphology issues
E6 irradiated and annealed

see data here

E6 CVD
Standard grade
[N] ≈ 2.6 x 10¹⁶ cm^-3

Apollo CVD
[N] = medium density

1-3 um layer on EL
irradiated and annealed by E6
[N] = ~3 ppm
15N
12C/13C >99.99%
polished edges

E6: Samples 1860318-1 to 4 are ~100um thick, 1-3ppm [N] layers (we expect [Ns] to be around 2.5ppm), 99.999% 12C, 15N grown on 4 small EL (2x2mm) substrates. Irradiated and annealed by E6.

T2: 90us, DQ T2*: 3.7us
contrast (echo) is 2% (medium-poor)
DEER ESR g=2 is minimal, no surface morphology issues
E6 irradiated and annealed

see data here

E6 CVD
EL SC substrate
angle-polished side facets
edges polished
15N 14-keV implant, 1° tilt
one-quarter of sample
[N] = 3 x 10¹¹ cm^-2
[NV] ≈ 6 x 10⁹ cm^-2

E6 CVD
99.999% 12C layer (≈50-100 μm), as grown
EL SC substrate
angle-polished side facets

mounted sample box
(yellow sample on glass slide)
E6 CVD
N-doped CVD layer (1-2 μm)
Pure CVD buffer layer (5-10 μm)
HPHT (type 1b) substrate
[NV] ≈ 0 cm^-3

10 um layer on SG
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process

EL on CVD substrate {100}

2.0 x 2.0 x 0.5 mm

10% 13C layer

Ink mark on substrate side. As grown surface

details from E6

E6 CVD
99.999% 12C layer
HPHT (type 1b) substrate
polished
15N 14-keV nano-implant
[N] = 1 x 10¹³ cm^-2
[NV] ≈ 5 x 10¹¹ cm^-2

E6 CVD
3.6mm x 3.6mm x 3.6mm
N-doped CVD layer
EL SC CVD buffer layer
HPHT (type 1b) substrate

E6 CVD
3.6mm x 3.6mm x 3.6mm
N-doped CVD layer (~50 μm)
EL SC CVD buffer layer
HPHT (type 1b) substrate
[N] ≈ 3.5 x 1018 cm-3
[NV] ≈ 5.3 x 1014 cm-3
both surfaces polished by DDK, N-doped layer now gone

E6 CVD
99.99% 12C layer (>30 μm)
EL SC substrate
polished
14N 60-keV implant (13C side)
[N] = 4 x 1012 cm-2
cut into 4 pieces by DDK
14N 60-keV implant, 7° tilt (InnovION) (12C side)
[N] = 4 x 1012 cm-2

E6 CVD
99.99% 12C layer (>30 μm)
EL SC substrate
polished
14N 60-keV implant (13C side)
[N] = 4 x 1012 cm-2
cut into 4 pieces by DDK
14N 60-keV implant, 7° tilt (InnovION) (12C side)
[N] = 4 x 10¹² cm-2
12C 20-keV co-implant
[C] = 1 x 10¹³ cm-2

E6 CVD
99.99% 12C layer (>30 μm)
EL SC substrate
polished
14N 60-keV implant (13C side)
[N] = 4 x 1012 cm-2
cut into 4 pieces by DDK
14N 60-keV implant, 7° tilt (InnovION) (12C side)
[N] = 4 x 1012 cm-2
12C 20-keV co-implant
[C] = 1 x 1014 cm-2

E6 CVD
99.99% 12C layer (>30 μm)
EL SC substrate
polished
14N 60-keV implant (13C side)
[N] = 4 x 1012 cm-2
cut into 4 pieces by DDK
14N 60-keV implant, 7° tilt (InnovION) (12C side)
[N] = 4 x 1012 cm-2
12C 20-keV co-implant
[C] = 1 x 1015 cm-2

Apollo CVD
N-doped layer (7 μm) (~15 μm)
CVD substrate
[N] ≈ 1.4 x 10¹⁹ cm^-3 (SIMS)

[N] ~ 3 ppm (75% 15N, 25% 14N)
99.999% 12C
2 x 2 mm
~5um thick
ELSC plate

see details here

E6: Samples 1860318-1 to 4 are ~100um thick, 1-3ppm [N] layers (we expect [Ns] to be around 2.5ppm), 99.999% 12C, 15N grown on 4 small EL (2x2mm) substrates. Irradiated and annealed by E6.

T2: 90us, DQ T2*: 3.7us
contrast (echo) is 2% (medium-poor)
DEER ESR g=2 is minimal, no surface morphology issues
E6 irradiated and annealed

see data here

~20 um layer on substrates with more background than EL but less than SG
irradiated and annealed by E6
[N] = 17 ppm
14N
12C/13C >99.99%
new process to attempt to reduce strain

E6 CVD
99.999% 12C layer
EL SC substrate
polished
15N 200-keV implant
anneal recipe 3
[N] = 2.5 x 1013 cm-2

1.7 um layer on EL
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process, polished edges

E6 CVD
3.6mm x 3.6mm x 3.6mm
N-doped CVD layer (~6 μm)
EL SC CVD buffer layer
HPHT (type 1b) substrate

Bulk, 3.0 mm lateral dimensions, ~0.1 mm thick, edges
irradiated and annealed by E6
14N
12C or 13C: >99.99%
~ 3 ppm [Ns0]
~0.5 ppm [NV]
[NV-]/[NVtot] = 0.21 (UV-vis)
new process underdevelopment

1.7 um layer on EL
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process, polished edges

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 1017 cm-3
cut into 4 pieces by DDK
15N 14-keV implant
anneal recipe 3, anneal recipe 4
[N] = 5 x 1012 cm-2

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 1017 cm-3
15N 14-keV implant
cut into 4 pieces by DDK
anneal recipe 1
[N] = 5 x 1012 cm-2

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 1017 cm-3
cut into 4 pieces by DDK

E6 CVD
~1mm x 1mm
EL SC substrate
electron irradiation
[V] ~ 1.76 x 1017 cm-3
cut into 4 pieces by DDK

E6 CVD
N-doped layer (2-6 μm)
pure buffer layer (10-30 μm)
pure CVD substrate
[NV] ≈ 10¹⁴ – 10¹⁵ cm^-3

MIT diamond
E6 layer sample. 10.5 ppm, 0.5-2 um, 2 mm x 2 mm
N-doped 99.999% 12C CVD layer (≈0.5-2 μm), as grown
EL SC substrate
Electron Irradiated

(Bizarro sister)

E6: Samples 1860318-1 to 4 are ~100um thick, 1-3ppm [N] layers (we expect [Ns] to be around 2.5ppm), 99.999% 12C, 15N grown on 4 small EL (2x2mm) substrates. Irradiated and annealed by E6.

T2: 90us, DQ T2*: 3.7us
contrast (echo) is 2% (medium-poor)
DEER ESR g=2 is minimal, no surface morphology issues
E6 irradiated and annealed

see data here

E6 CVD
99.999% 12C layer
EL SC substrate
polished
patterned N 3-keV implant, 0° tilt
[N] = 2 x 1013 cm-2

E6 CVD
99.999% 12C layer
EL SC substrate
polished
patterned N 12-keV implant, 0° tilt
[N] = 2 x 1013 cm-2

E6 CVD
99.999% 12C layer
EL SC substrate
polished
patterned N 6-keV implant, 0° tilt
EL SC CVD overgrowth (100 nm)
[N] = 2 x 1013 cm-2
(removed by reactive ion etching)
14N 60-keV implant, 7° tilt (InnovION)
[N] = 1 x 1013 cm-2

E6 CVD
99.999% 12C layer
EL SC substrate
polished
14N 14-keV implant, 0° tilt
[N] = 5 x 10¹² cm^-2

E6 CVD
50 μm thin sample
EL SC
polished
14N 60-keV implant, 10° tilt (InnovION)
[N] = 1 x 109 cm-2

E6 CVD
10% 13C enriched layer
1.1% 13C
EL SC substrate
polished

E6 CVD
10% 13C enriched layer
1.1% 13C
ELSC substrate
polished
14N 85-keV implant, 0° tilt
[N] = 2 x 10¹² cm^-2

E6 CVD
10% 13C enriched layer
1.1% 13C ?
EL SC substrate
polished again after RIE damage

E6 CVD
10% 13C enriched layer

1.1 % 13 (?!)
EL SC substrate
polished
14N 85-keV implant, 0° tilt
[N] = 2 x 10¹² cm^-2

~ 14 ppm [Ns0] samples, natural 13C abundance, ~3.5 ppm [NV]
2070508: 2.7 mm x 2.7 mm x 0.5 mm

This is a 4mm diamond. It original has a sample id identical to Arya. It may have same property as Arya

Purple diamond

Sumitomo HPHT (type 2a)
15N2 15-keV implant dose matrix (77 K)
Region 1: [N] = 2 x 109 cm-2
Region 2: [N] = 2 x 10¹⁰ cm-2
Region 3: [N] = 2 x 10¹¹ cm-2
Region 4: [N] = 1 x 10¹² cm-2
Region 5: [N] = 5 x 10¹² cm-2
Region 6: [N] = 2 x 10¹³ cm-2
Region 7: [N] = 1 x 10¹⁵ cm-2

E6 CVD
3.6mm x 3.6mm x 3.6mm
N-doped CVD layer (~27 μm)
EL SC CVD buffer layer
HPHT (type 1b) substrate
[N] ≈ 1.1 x 10¹⁸ cm^-3
[NV] ≈ 1.8 x 10¹⁴ cm^-3

E6 CVD
99.999% 12C layer
EL SC substrate
unpolished
14N 2.5-keV implant dose matrix (Bochum) 900C anneal (8 hours)[N] = 1.4 x 1012 cm-2[N] = 1.4 x 1011 cm-2[N] = 4.2 x 1010 cm-2[N] = 1.4 x 1010 cm-2[N] = 4.2 x 109 cm-2[N] = 1.4 x 109 cm-214N2 2.5-keV implant dose matrix (Bochum) 900C anneal (8 hours)[N] = 4.3 x 1011 cm-2[N] = 1.2 x 1011 cm-2[N] = 4.3 x 1010 cm-2[N] = 1.2 x 1010 cm-2[N] = 4.3 x 109 cm-2

E6 CVD
99.999% 12C layer
EL SC substrate
polished
14N 85-keV implant, 0° tilt
[N] = 1 x 1010 cm-2
(removed by reactive ion etching)
15N 14-keV implant
[N] = 2 x 1012 cm-2

E6 CVD
99.999% 12C layer
EL SC substrate
polished
15N 14-keV nano-implant
[N] = 1 x 10¹³ cm^-2

E6 CVD
99.999% 12C layer
EL SC substrate
polished
15N 6-keV implant, 0° tilt
465C RTP (50 minutes)
[N] = 1 x 109 cm-2
[NV] ≈ 6 x 107 cm-2
Innovion implant N14+, 5e11, 6 keV

E6 CVD
99.999% 12C layer
EL SC substrate
polished
15N 14-keV nano-implant (region 1)
[N] = 1 x 1013 cm-2
12C 20-keV co-implant
[C] = 1 x 1012 cm-2
14N2 14-keV nano-implant, 0° tilt (region 2)
[N] = 2 x 1012 cm-2
12C 8-keV co-implant, 0° tilt
[C] = 5 x 1012 cm-2

E6 CVD
N-doped 99.999% 12C CVD layer (≈13 μm), as grown
EL SC substrate
[N] = 4.71 10¹⁸ cm^-3 – SIMS
electron irradiation (1.3 x 10¹⁴ cm^-2 s^-1 beam flux, 2.5 hours)

E6 CVD
99.999% 12C layer
EL SC substrate
polished

5 x 5 mm 40 um layer on ELSC

grown with 10 ppm 15N

99.95% 12C

electron irradiated: 4.5 MeV for 8.5 hours (E6) brother sample to The Mountain

Layer side is side with chip

Sides polished

5 x 5 mm 40 um layer on ELSC

10 ppm 15N

99.95% 12C

electron irradiated: 4.5 MeV for 8.5 hours

brother to The Hound

Sides polished, DDK

E6 HPHT
[N] < 200 ppm (spec)
3.0 × 3.0 x 0.3 mm
See Post

E6 CVD
Sister sample to Cypher
[N] = low density
[NV] = very low density

from E6:
$[N_{total}]$ = 17 ppm
$[N_s^0]$ = 14 ppm (before irradiation+anneal)
$[NV_{total}]$ = 3.6 ppm
irradiated and annealed
99.999% 12C
4 mm x 4 mm x 0.1 mm plate (no substrate)

*plate produced from same sample as Antman

E6 reported: 10 ppm [14N] (see lablog)
>99.95% 12C (unreported)
10 um layer on ELSC
irradiation doseage: 6e18/cm^-2
annealed 800C 12 hours, 1000C 12 hours

E6 CVD
99.99% 99.97% 12C layer
CVD EL SC substrate, polished
preferential NV orientation
[NV] ≈ 3 x 10¹² cm^-3

Info on how to locate the NV layer: here and here

E6 CVD
electron irradiated,
1200C anneal (8 hours)
[NV] ≈ 10¹⁷ cm^{-3
[N] = 1.4 ppm from SIMS}

1-3 um layer on SG
irradiated and annealed by E6
[N] = ~3 ppm
15N
12C/13C >99.99%

Samples 1860320-1 to 4 are ~2.5um thick, 1-3ppm [N] layers (we also expect [Ns] to be around 2.5ppm), 99.999% 12C, 15N grown on 2 small EL (2x2mm).

T2: 180 us
DQ T2*: 8.9 us
contrast (echo) is 0.5% (very poor)
g=2 unknown (DEER-ESR not yet measured)
Some surface issues (etch pits)
13C rich interlayer with 300 ppb [N]
irradiated and annealed by E6

see details here

10 um layer on EL (4 x 4mm)
irradiated and annealed by E6
[N] = 17 ppm
15N
12C/13C >99.99%
[NV] = 2.7 ppm
“purple diamond” process, polished edges

As-grown, homogeneous bulk material (fragment, LM MK2+ material)

99.999% 12C abundance

7 ppm [N]

bulk “dark purple” sample which arrived from E6 around July 2015
“E6 pet project where they irradiated and annealed repeatedly”
500 ns T2* and 7 us Hahn echo T2
Comparable to LM material properties
The diamond is isotopically enriched with 12C

-A is the main piece, 3x3mm. There is a -B and -C that are broken off corners.

bulk “dark purple” sample which arrived from E6 around July 2015
“E6 pet project where they irradiated and annealed repeatedly”
500 ns T2* and 7 us Hahn echo T2
Comparable to LM material properties
The diamond is isotopically enriched with 12C

-A is the main piece, 3x3mm. There is a -B and -C that are broken off corners.

bulk “dark purple” sample which arrived from E6 around July 2015 “E6 pet project where they irradiated and annealed repeatedly” 500 ns T2* and 7 us Hahn echo T2 Comparable to LM material properties The diamond is isotopically enriched with 12C -A is the main piece, 3x3mm. There is a -B and -C that are broken off corners.